Ngawo-1960, izisebenzi zesayensi nezobuchwepheshe zakha ama-diode akhipha ukukhanya kwe-LED zisebenzisa isimiso se-semiconductor PN junction light-emitting.I-LED eyakhiwe ngaleso sikhathi yenziwe nge-GaASP, futhi umbala wayo wawubomvu.Ngemuva kweminyaka ecishe ibe ngu-30 yokuthuthuka, i-LED eyaziwayo ingakhipha imibala ebomvu, ewolintshi, ephuzi, eluhlaza, eluhlaza okwesibhakabhaka neminye.Kodwa-ke, ama-LED amhlophe okukhanyisa athuthukiswe kuphela ngemva kuka-2000. Lapha, abafundi bethulwa kuma-LED amhlophe okukhanyisa.

thuthukisa

Umthombo wokuqala wokukhanya we-LED owenziwe ngesimiso sokukhishwa kokukhanya kwe-semiconductor PN junction waphuma ekuqaleni kwawo-1960.Into esetshenziswa ngaleso sikhathi i-GaAsP, ekhipha ukukhanya okubomvu (λp=650nm).Uma amandla okushayela angu-20 mA, ukukhanya okukhanyayo kuyingxenye yezinkulungwane ezimbalwa zamalumens, futhi ukusebenza kahle okukhanyayo okuhambisanayo cishe ku-0.1 lumen/watt.

Maphakathi nawo-1970s, izakhi ezi-In no-N zethulwa ukwenza ama-LED akhiqize ukukhanya okuluhlaza (λp=555nm), ukukhanya okuphuzi (λp=590nm) nokukhanya okusawolintshi (λp=610nm), kanye nokusebenza kahle okukhanyayo nakho kwandiswa kwaba ngu-1 ilume/watt.

Ekuqaleni kwawo-1980, imithombo yokukhanya ye-LED ye-GaAlAs yavela, okwenza ukusebenza okukhanyayo kwama-LED abomvu kufinyelele ku-lumens eyi-10/watt.

Ekuqaleni kwawo-1990, izinto ezimbili ezintsha, i-GaAlInP, ekhipha ukukhanya okubomvu nokuphuzi, kanye ne-GaInN, ekhipha ukukhanya okuluhlaza nokuluhlaza, zathuthukiswa ngempumelelo, okwathuthukisa kakhulu ukusebenza okukhanyayo kwama-LED.

Ngo-2000, ukusebenza okukhanyayo kwama-LED enziwe angaphambili afinyelela ku-100 lumens ngewathi ngayinye ezindaweni ezibomvu nesawolintshi (λp=615nm), kuyilapho ukusebenza okukhanyayo kwama-LED enziwe yiwokugcina endaweni eluhlaza (λp=530nm) ingafinyelela ama-lumens angama-50./watt.